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| MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CM200RX-12A IC ................................................................... 200A VCES ............................................................ 600V 7pack (3-phase Inverter + Brake) Flatbase Type / Insulated Package / Copper (non-plating) base plate RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers OUTLINE DRAWING & CIRCUIT DIAGRAM (20.5) Dimensions in mm 1.15 0.65 3.5 4.3 1.5 0.8 12.5 91.2 95 (102.25) (110) 114.06 0 (7.75) 15 18.8 30.24 34.04 45.48 49.28 60.72 64.52 75.96 79.76 (3.81) 2.5 2.1 (7.4) LABEL 1.2 TERMINAL t = 0.8 SECTION A 17 13 (21.14) 6.5 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 54.2 (50) 12 11 10 9 8 7 17 12 6 35 17 12 6 39 50 0.5 57.5 62 77.1 34.52 30.72 15.48 11.66 0 22 39 36 1 2 3 4 6 5 13.64 14 (21.14) A 6 12 13.5 20.71 8.5 17 22.86 22.86 6.5 (3) (5.4) 12.5 (SCREWING DEPTH) 17 +1 -0.5 P(35) 6-M5 NUTS 22.86 Pin positions with tolerance 0.5 TH1(11) NTC Division of Dimension 0.5 over 3 6 30 to to to to to 3 6 30 120 400 Tolerance 0.2 0.3 0.5 0.8 1.2 GuP(34) B(4) EuP(33) GvP(26) EvP(25) U(1) GwP(18) TH2(10) EwP(17) V(2) W(3) over GB(6) EB(5) N(36) GuN(30) EuN(29) GvN(22) EvN(21) GwN(14) EwN(13) over over 120 CIRCUIT DIAGRAM 0.8 136.9 121.7 110 0.5 99 94.5 4-5.5 MOUNTING HOLES (20.5) 7 Jan. 2009 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 68C Collector current Pulse Maximum collector dissipation TC = 25C Emitter current TC = 25C (Free wheeling diode forward current) Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Rating 600 20 200 400 735 200 400 Unit V A W A BRAKE PART Symbol VCES VGES IC ICRM PC VRRM(Note.3) IF (Note.3) IFRM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 75C Collector current Pulse Maximum collector dissipation TC = 25C Repetitive peak reverse voltage TC = 25C Forward current Pulse Rating 600 20 100 200 400 600 100 200 Unit V A W V A (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) MODULE Symbol Tj Tstg Viso -- -- -- -- Parameter Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Torque strength Weight Conditions Rating -40 ~ +150 -40 ~ +125 2500 0 ~ +100 2.5 ~ 3.5 2.5 ~ 3.5 330 Unit C Vrms m N*m g Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) On the centerline X, Y M5 screw Main terminals M5 screw Mounting (Typical) Note. 8: The base plate flatness measurement points are in the following figure. - - - Jan. 2009 2 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Parameter (Tj = 25C, unless otherwise specified) Conditions VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 20mA, VCE = 10V Gate leakage current VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge IC = 200A, VGE = 15V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = 15V, RG = 5.1 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 200A) IE = 200A, VGE = 0V (Note. 6) Tj = 25C Tj = 125C Chip VEC(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG IE = 200A, VGE = 0V Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25C, per switch External gate resistance Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.0 Limits Typ. -- 6 -- 1.7 1.9 1.6 -- -- -- 530 -- -- -- -- -- 5 2.0 1.95 1.9 -- -- 0 -- Max. 1 7 0.5 2.1 -- -- 27 2.7 0.8 -- 120 150 350 600 200 -- 2.8 -- -- 0.17 0.33 -- 31 Unit mA V A V nF nC ns C V K/W BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG IRRM(Note.3) Parameter Conditions Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.0 Limits Typ. -- 6 -- 1.7 1.9 1.6 -- -- -- 270 -- 2.0 1.95 1.9 -- -- 0 -- Max. 1 7 0.5 2.1 -- -- 13.3 1.4 0.45 -- 1 2.8 -- -- 0.31 0.59 -- 62 Unit mA V A V VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 10mA, VCE = 10V Gate leakage current VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Repetitive peak reverse current IC = 100A, VGE = 15V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 100A, VGE = 15V VR = VRRM IF = 100A (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) nF nC mA V VFM(Note.3) Forward voltage drop Rth(j-c)Q Rth(j-c)R RGint RG IF = 100A per IGBT Thermal resistance (Note. 1) per Clamp diode (Junction to case) TC = 25C Internal gate resistance External gate resistance K/W Jan. 2009 3 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE NTC THERMISTOR PART Symbol R R/R B(25/50) P25 Parameter Zero power resistance Deviation of resistance B constant Power dissipation Conditions TC = 25C TC = 100C, R100 = 493 Approximate by equation TC = 25C Min. 4.85 -7.3 -- -- Limits Typ. 5.00 -- 3375 -- Max. 5.15 +7.8 -- 10 Unit k % K mW (Note. 7) MODULE Symbol Rth(c-f) Parameter Conditions (Note. 2) Min. -- Limits Typ. 0.015 Max. -- Unit K/W Contact thermal resistance Thermal grease applied (Note. 1) per 1 module (Case to fin) Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of = 0.9W/(m*K). 3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. 5: Junction temperature (Tj) should not increase beyond 150C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [C]+273.15 = 323.15 [K] Chip Location (Top view) 22.9 33.9 44.9 55.9 79.4 0 91.4 Dimensions in mm (tolerance: 1mm) 92.4 100.2 101.8 106.0 LABEL SIDE 0 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 0 17.4 (62) (50) 35 24.4 28.0 35.0 36 Tr UP Di UP (77.1) Tr UN Di UN 1 Tr VP Di VP Tr VN Di VN 2 3 Tr WP Di WP Di Tr Br WN Th Di WN Tr Br 4 12 11 10 9 8 7 6 5 18.3 26.8 39.7 (110) (121.7) (136.9) Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), Th: NTC thermistor Jan. 2009 4 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE P V VGE = 15V GuP EuP P IC VGE = 0V GuP EuP P U VGE = 0V GuN EuN U VGE = 15V GuN EuN B IC V VGE = 15V GB EB IC N V N N P side Inverter part Tr (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) N side Inverter part Tr (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) VCE(sat) test circuit Br Tr VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP, GuN-EuN, GvN-EvN, GwN-EwN) P V VGE = 0V GuP EuP P IE VGE = 0V GuP EuP P V IF B U U VGE = 0V GuN EuN VGE = 0V GuN EuN IE N V VGE = 0V GB EB N P side Inverter part Di (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) N side Inverter part Di (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) VEC/VFM test circuit N Br Di VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP, GuN-EuN, GvN-EvN, GwN-EwN) Arm IE 0V Load VGE 90% 0% IE trr -VGE + VCC IC 90% +VGE 0V -VGE 0A t RG VGE VCE IC 0A td(on) tr td(off) tf Irr 10% 1/2 Irr Qrr = 1/2 Irr trr Switching time test circuit and waveforms trr, Qrr test waveform Jan. 2009 5 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) VGE = 20V 15 13 Tj = 25C 12 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 400 3.5 VGE = 15V 3 2.5 2 1.5 1 0.5 0 0 100 200 Tj = 25C Tj = 125C 300 400 300 200 11 100 10 9 8 0 1 2 3 4 5 6 7 8 9 10 0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25C 8 6 EMITTER CURRENT IE (A) 102 7 5 3 2 4 IC = 200A IC = 400A 2 IC = 80A 0 6 8 10 12 14 16 18 20 101 0 0.5 1 1.5 2 Tj = 25C Tj = 125C 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 102 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104 7 5 3 2 CAPACITANCE (nF) Cies SWITCHING TIME (ns) 103 tf 101 7 5 3 2 7 5 td(off) 3 2 7 td(on) 5 3 2 7 5 3 2 102 100 7 5 3 2 Coes 101 tr Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 Conditions: VCC = 300V VGE = 15V RG = 5.1 Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Jan. 2009 6 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 tf td(off) td(on) tr Conditions: VCC = 300V VGE = 15V IC = 200A Tj = 125C Inductive load 2 3 5 7 101 2 3 5 7 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 Conditions: VCC = 300V VGE = 15V RG = 5.1 101 Tj = 125C 7 Inductive load 7 5 3 2 5 3 2 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) 7 5 3 2 102 7 5 3 2 Eoff Eon Err 101 7 5 3 2 100 7 5 3 2 100 0 10 10-1 1 10 2 3 5 7 102 2 3 5 7 103 GATE RESISTANCE RG () COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 Conditions: VCC = 300V 5 VGE = 15V 3 RG = 5.1 Tj = 25C 2 Inductive load Irr 102 trr 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 7 5 3 2 SWITCHING LOSS (mJ/pulse) Eon Conditions: 100 VCC = 300V 7 5 VGE = 15V 3 IC, IE = 200A 2 Tj = 125C Inductive load 10-1 0 10 23 5 7 101 7 5 3 2 Err lrr (A), trr (ns) 101 Eoff 2 3 5 7 102 101 1 10 2 3 5 7 102 2 3 5 7 103 GATE RESISTANCE RG () EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 7 Single pulse 5 TC = 25C 3 2 7 5 3 2 GATE-EMITTER VOLTAGE VGE (V) IC = 200A VCC = 200V 15 VCC = 300V NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 10-1 10 10-2 7 5 Inverter IGBT part : Per unit base = Rth(j-c) = 0.17K/W 3 Inverter FWDi part : Per unit base = Rth(j-c) = 0.33K/W : Per unit base = Rth(j-c) = 0.31K/W 2 Brake IGBT part 5 0 0 200 400 600 800 Brake Clamp-Di part : Per unit base = Rth(j-c) = 0.59K/W 10-3 10-52 3 5710-42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 TIME (s) GATE CHARGE QG (nC) Jan. 2009 7 MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part 103 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 3.5 VGE = 15V 2.5 2 1.5 1 0.5 0 0 50 100 Tj = 25C Tj = 125C 150 200 FORWARD CURRENT IF (A) 3 102 7 5 3 2 101 7 5 3 2 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 3 3.5 4 100 COLLECTOR CURRENT IC (A) FORWARD VOLTAGE VF (V) Jan. 2009 8 |
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